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Title
Communication The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide
AuthorLeitgeb, Markus ; Backes, Andreas ; Schneider, Michael ; Zellern, Christopher ; Schmid, Ulrich
Published in
ECS Journal of Solid State Science and Technology, 2016, Vol. 5, Issue 3, page 148-150
PublishedElectrochemical Society (ECS), 2016
LanguageEnglish
Document typeJournal Article
Keywords (EN)Metal Assisted Etching / Porous Silicon Carbide
ISSN2162-8777
URNurn:nbn:at:at-ubtuw:3-3846 Persistent Identifier (URN)
DOI10.1149/2.0021603jss 
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 The work is publicly available
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Communication The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide [0.28 mb]
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Abstract (English)

Porous 4H-SiC layers were fabricated by photochemical etching of n-type 4H-SiC samples with varying resistivity. An etching solution of Na2S2O8 and HF was used while Pt deposited at the 4H-SiC surface served as catalyst for the reduction of Na2S2O8. The contact resistance at the Pt/4H-SiC junction was decreased by annealing and surface near phosphorous doping. This enabled the porosification of 4H-SiC with photochemical etching.

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CC-BY-License (4.0)Creative Commons Attribution 4.0 International License