The continuous device scaling trend by the semiconductor industry has increased the demand for new materials and novel device architectures, as the current devices are approaching their theoretical limits. Semiconductor nanowires have shown very promising results in that regard, as they exhibit unique and novel properties compared to their bulk counterparts. Ge nanowires are of great interest in particular, as compared to Si, they exhibit a higher carrier mobility and lower processing temperatures, while still being compatible with current Si semiconductor devices. The most common approach towards the synthesis of Ge nanowires occurs via a metal assisted growth process, in which gold nanoparticles are used as seeds for the growth. Unfortunately, Au can lead to the incorporation of deep level traps affecting the electronic performance of the germanium crystal. In order to circumvent this problem alternative metal seeds have been considered. For instance, Ga is an attractive alternative due to its low melting point combined with the potential of acting as a p-dopant for the nanowires. This work contains studies related to the synthesis of Ge nanorods at low temperatures in solution. The Ga growth seeds were prepared in situ by thermal decomposition of different Ga precursors. In a similar set of experiments different Ge precursors were studied as potential Ge sources in the desired temperature range. In Addition, the temperature depended growth regimes of Ga doped Ge nanowires and the related changes in morphology and composition were investigated. The Ge NWs were grown by liquid injection chemical vapor deposition (LI-CVD), while the required gallium seeds were prepared in solution.