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Title
Investigation of charge up effects on silicon test structures / von Paul Jagenteufel
AuthorJagenteufel, Paul
CensorKrammer, Manfred
PublishedWien, 2015
Description74 Seiten : Illustrationen, Diagramme
Institutional NoteTechnische Universität Wien, Diplomarbeit, 2015
LanguageEnglish
Document typeThesis (Diplom)
Keywords (EN)Silicon detectors
URNurn:nbn:at:at-ubtuw:1-106504 Persistent Identifier (URN)
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 The work is publicly available
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Investigation of charge up effects on silicon test structures [11.02 mb]
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Abstract (English)

The CMS experiment is one of the large LHC experiments at CERN. As it is continuously running, the detector degrades with time because of the radiation damage of the colliding particles. So the detector has to be renewed around 2022 in the so-called phase II upgrade. For this upgrade new sensors have to be developed with new technology or materials, that exhibit higher radiation hardness, because after the upgrade the luminosity of the LHC shall be increased. The comparison of the process quality of the sensors of different vendors based on the characterisation of teststructures is the scope of this diploma thesis. Special emphasis was laid on charge up effects, that were examined and also tried to provoke on gate-controlled diodes and MOS structures in particular.

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