The fast progress in the electronic industry regarding enhanced performance and miniaturisation leads to an increased demand for new materials exhibiting superior electronic properties. Elongated nanostructures of the well-known group IV element germanium stay in focus of intense research efforts due to the high charge carrier mobilitys, achievable with this material. Usually, germanium nanowires are grown via the gas-phase on substrates or in solution using a gold-assisted growth process. However, the usage of gold as growth promoter leads to many drawbacks, such as decreasing semiconducting properties due to incorporation of seed atoms into the nanowire material. Therefore, various metals have been investigated as alternative growth promoters, nevertheless some interesting elements have not been examined yet. In the first part of this thesis, the application of lead as an alternative growth promoter for germanium nanowires is investigated. ^Nanowire growth is conducted via liquid-seeded growth in the vapour phase and under supercritical fluid conditions. Obtained single crystalline nanowires with approx. 15 nm in diameter exhibit no seed material incorporation. Additionally, solid-seeded growth in the supercritical regime is investigated. Therein, metal-amide precursors are used, to achieve sufficient thermolysis at lower growth temperatures. In another study, low temperature growth for germanium nanorods and nanowires is examined. Gallium seeds, which induced nanowire growth, are generated in situ by the thermal decomposition of pentamethylcyclopentadienyl gallium (I) in toluene. Gallium seeds seem to catalyse the decomposition of the germanium precursor, which enables decreasing the growth temperature as low as 170 C, which is the lowest reported temperature for germanium nanowire grown via CVD. The obtained nanostructures exhibited a high crystallinity, despite low growth temperatures. ^Elemental maps obtained from STEM EDX measurements exhibit an incorporation of up to 3.6 % gallium into the nanowire matrix. Ga incorporation in germanium is known to result in a p-doping effect of the material. Electrical characterisation of single nanowires revealed a very high conductivity compared to pristine germanium nanowires. Lastly, the defect transfer from solid silver seeds to germanium nanowires is used to gain control over the nanowires crystal structure. Silver bipyramids exhibiting a defined twin structure are synthesised via the polyol-method and used to promote nanowire growth via a solid-seeded mechanism. Unfortu-nately, nucleation as well as nanowire growth is strongly inhibited, which is related to the capping agent, used for the polyol method. Large fractions of the obtained nanowires exhibit strong kinking or diameters not matching to the synthesised silver seeds. Nevertheless, hints towards a successful defect transfer are found.