Scanning microwave microscopy is a state of the art measurement technology which is main topic of several research groups around the world. It combines the spatial resolution of an atomic force microscope with the signal processing capabilities of modern vector network analyzers. These two fully developed systems combined provide huge possibilities for future applications in many different fields of research. In the scanning microwave microscope, a microwave signal is guided via a conducting tip into the sample where it gets reflected. The ratio between the reflected and incident microwave power, denoted reflection coefficient, is dependent of the local sample properties. Previous works tried to find a relation between the measured reflection coefficient and the local sample properties. But a general valid and/or user-friendly relation could not be found. One way to find a correlation between the measured reflection coefficient and the local sample properties is to build a lumped element model of the SMM. These models were investigated, calibrated and analyzed with the frequency sweep. But they were never used to transform some measurement data into sample properties. This is the starting point of this work. In this work, the model attempts of previous works were reinvented and modified. The models then were used to transform measurement data into sample properties which further were compared with simulation results to test the validity of the models. For this purpose, a physical model of metal-insulator-semiconductor structures was invented and used to test the correctness of the models.