Titelaufnahme

Titel
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers / von Dieter Ingerle
VerfasserIngerle, Dieter
Begutachter / BegutachterinStreli, Christina
Erschienen2015
Umfang68 Bl. : Ill., graph. Darst.
HochschulschriftWien, Techn. Univ., Dipl.-Arb., 2015
Anmerkung
Zsfassung in dt. Sprache
SpracheEnglisch
DokumenttypDiplomarbeit
Schlagwörter (EN)GI-XRF / grazing incidenceX-ray spectrometry / nanotechnology / Ultra shallow junctions
URNurn:nbn:at:at-ubtuw:1-86510 Persistent Identifier (URN)
Zugriffsbeschränkung
 Das Werk ist frei verfügbar
Dateien
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers [13.47 mb]
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Zusammenfassung (Englisch)

Grazing Incidence X-ray Fluorescence Analysis (GIXRF) takes advantage of the total external reflection of X-rays on a smooth, polished surface. Due to the penetration depth of only a few nanometers at very small incidence angles, GIXRF is able to probe the elemental composition in the near surface region of the sample. Furthermore by adjusting the angle of incidence and measuring the angle-dependent X-ray fluorescence signals, the technique is able to provide information on the total dose and depth distribution of the elements. The depth profile information is ambigous, thus the evaluation process, which consists of fitting the measured data to simulations, needs additional input from another technique. In the present work a GIXRF measuring chamber is presented, which was designed, constructed and tested within the context of the EC funded European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA) . Moreover an acquisition and control software and a measurement protocol were developed and tested. GIXRF measurements for the characterization of Ultra Shallow Junctions (USJ) were used to ascertain the performance of the new instrument. Secondary Ion Mass Spectrometry (SIMS) was used as a complementary technique for the depth profile evaluation. The dose quantification of the implanted Arsenic was compared with Instrumental Neutron Activation Analysis (INAA) and SIMS. Furthermore Hafnium based high k layers on Silicon were analyzed and the results compared to other techniques of the ANNA partners. Part of this work has been published in the following publications: 1. D. Ingerle, F. Meirer, N. Zoeger, G. Pepponi, D. Giubertoni, G. Steinhauser, P. Wobrauschek, C. Streli, A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers, Spectrochimica Acta Part B: Atomic Spectroscopy 65 (6) (2010) 429-433. doi:10.1016/j.sab.2004.04.014 2. G. Pepponi, D. Giubertoni, M. Bersani, F. Meirer, D. Ingerle, G. Steinhauser, C. Streli, P. Hoenicke, B. Beckhoff, Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 28 (1) (2010) C1C59. doi:10.1116/1.3292647 3. D. Giubertoni, G. Pepponi, B. Beckhoff, P. Hoenicke, F. Gennaro, F. Meirer, 4 D. Ingerle, G. Steinhauser, M. Fried, P. Petrik, A. Parisini, M. A. Reading, C. Streli, J. van den Berg, M. Bersani, Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium, AIP Conference Proceedings 1173 (2009) (2009) 45-49. doi:10.1063/1.3251258