40 years of development of Secondary ion mass spectrometry have turned this method to an important technology in surface and thin film analysis of solids. Especially with the introduction of TOF-SIMS the field of application has broadened eminently. This work focuses three topics out of a few, realised within this PhD-Thesis. It centres the adoption of dynamic SIMS technology to novel applications. 1) Investigations on novel materials: Materials science often uses means of SIMS in the characterisation of new materials. In this study carbon fibres and copper should merge to a novel material with high thermal conductivity and tailorable coefficient of thermal expansion (CTE). In order to enhance the adhesion of both materials, several tests with surface pre-treatment and investigations with interlayers of chromium or molybdenum have been performed. SIMS was able to characterise the elemental distribution in thermally deposited test layers.
2) SIMS application in the investigation of historical objects: The minimal sample destruction and the enormous gain on information from the measurement makes SIMS a suitable method of choice. This study investigates corrosion stains on gold coins. In a first run only test coins were investigated, a second run, performed with a TOF-IV device at the Kernforschungszentrum Jülich, also consisted of two historical coins from the 19th century. SIMS studies revealed the presence of silver and copper at the corrosion stains in connection with sulphur and some chlorine. The silver grains imprinted into the test coin surface and treated with K2Sx [K tief 2 normal S tief x] for 5 hours at 60 C were still partly metallic, whereas all stains at the ancient coins seems fully corroded. 3) Characterisation of implantations in order to confirm simulation calculations: Computer simulations of ion implantations are widely used in semiconductor research and development. Still in some applications a minor mismatch between simulation and practise is observable. SIMS measurements accompanied two investigations on the implantation of rare earth element erbium and on the defect simulation of boron channelling implantation. Both studies afforded a maximum precision and repeatability of the measurement. This study also takes a closer look at the depth evaluation, especially when interpreting near surface regions.