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Record link:
https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-11422
http://hdl.handle.net/20.500.12708/12174
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Title:
Physical modeling of electron transport in strained silicon and silicon-germanium
en
Citation:
Smirnov, S. (2003).
Physical modeling of electron transport in strained silicon and silicon-germanium
[Dissertation, Technische Universität Wien]. reposiTUm. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-11422
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CatalogPlus:
AC04082352
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Publication Type:
Thesis - Dissertation
en
Language:
English
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Authors:
Smirnov, Sergey
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Advisor:
Kosina, Hans
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Co-advisor:
Selberherr, Siegfried
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Organisational Unit:
E360 - Institut für Mikroelektronik
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Date (published):
2003
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Number of Pages:
122
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Keywords:
Halbleiterschicht; Silicium; Germanium; Elektronentransport
de
Additional information:
Zsfassung in dt. Sprache
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License:
In Copyright
de
Appears in Collections:
Thesis
Fulltext (Version of Record (published version))
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(6.72 MB)
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