The field-effect transistor has evolved since its advent in 1947 from a humble barely working proof of concept device to an innumerable and indispensable basis for modern technology. After five decades of constant improvement and miniaturization, enabling new devices and applications, one can see the physical limits in the near future.<br />However, the field-effect devices are still improving every generation cycle and many exciting possibilities of the field-effect concept are still uncharted. The very powerful field-effect concept enables a vast area of possible applications. In this work four promising and interesting aspects of gate stack modeling are presented and described in detail. First with high-k materials utilized by modern CPU manufactures like Intel or IBM are reviewed. Special emphasis is layed on the description of the gate stacks for switching transistors and for non-volatile memory applications. Thereby, flash gate stacks are compared with alternative gate stack structures, which are able to facilitate the next technology node.<br />Then an overview of different commonly employed strain techniques which enable one of the major mobility boosts in state of the art devices, is given. The discussion of ferroelectric gate stacks for non-volatile memory applications follows as a promising candidate for a flash gate stack replacement. Thereafter, a short introduction to electrolytic interfaces and the biologically sensitive field-effect transistor (BioFET) is presented.<br />Starting with the concept of stress and strain in general, a focus on the mathematical description of strain in semiconductors and thereafter on quantization effects in ultra-thin body FETs follows. This is realized by a two-band k·p model and the assumption of a confinement potential.<br />The resulting model is able to predict the band structure in strained silicon up to about 0.5 eV quite well and delivers effective masses for the primed and unprimed subbands. The big advantage of the employed model compared to other available methods lies in the reduced computational effort.<br />Finally, the still young field of biologically sensitive field-effect transistors (BioFETs) is presented. These devices enable the sensing of biochemical processes from start to finish via electronic means. At first all the major effects of ionic transport in electrolytes and their mathematical modeling, is given, followed by examples of simulations for various applications, and their corresponding mathematical models.
en
dc.language
English
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dc.language.iso
en
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
gate stack
de
dc.subject
strained semiconductor
de
dc.subject
kp
de
dc.subject
UTB SOI
de
dc.subject
BioFET
de
dc.subject
DNAFET
de
dc.subject
ISFET
de
dc.subject
ProteinFET
de
dc.subject
gate stack
en
dc.subject
strained semiconductor
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dc.subject
kp
en
dc.subject
UTB SOI
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dc.subject
BioFET
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dc.subject
DNAFET
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dc.subject
ISFET
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dc.subject
ProteinFET
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dc.title
Engineering gate stacks for field-effect transistors
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dc.type
Thesis
en
dc.type
Hochschulschrift
de
dc.rights.license
In Copyright
en
dc.rights.license
Urheberrechtsschutz
de
dc.contributor.affiliation
TU Wien, Österreich
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dc.rights.holder
Thomas Windbacher
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tuw.version
vor
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tuw.thesisinformation
Technische Universität Wien
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dc.contributor.assistant
Summhammer, Johann
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tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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dc.type.qualificationlevel
Doctoral
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dc.identifier.libraryid
AC07807851
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dc.description.numberOfPages
135
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dc.identifier.urn
urn:nbn:at:at-ubtuw:1-42636
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dc.thesistype
Dissertation
de
dc.thesistype
Dissertation
en
dc.rights.identifier
In Copyright
en
dc.rights.identifier
Urheberrechtsschutz
de
tuw.advisor.orcid
0000-0002-5583-6177
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item.fulltext
with Fulltext
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item.cerifentitytype
Publications
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item.mimetype
application/pdf
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item.openairecristype
http://purl.org/coar/resource_type/c_db06
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item.languageiso639-1
en
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item.openaccessfulltext
Open Access
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item.openairetype
doctoral thesis
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item.grantfulltext
open
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crisitem.author.dept
E360 - Institut für Mikroelektronik
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik