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Ostermaier, Clemens
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 85 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Stabentheiner, M. ; Diehle, P. ; Hübner, S. ; Lejoyeux, M. ; Altmann, F. ; Neumann, R. ; Taylor, A. A. ; Pogany, Dionyz ; Ostermaier, Clemens On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devicesArticle Artikel 14-Jan-2024
2Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, D. ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasArticle Artikel Nov-2023
3Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, Dionyz ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasPresentation Vortrag4-Oct-2023
4Wieland, D. ; Ofner, S. ; Stabentheiner, Manuel ; Butej, Boris ; Koller, C. ; Sun, J. ; Minetto, A ; Reiser, K. ; Häberlen, O. ; Nelhiebel, M. ; Glavanovics, M ; Pogany, D. ; Ostermaier, C A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit testsInproceedings Konferenzbeitrag 2023
5Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
6Koller, C. ; Lymperakis, L. ; Pogany, D. ; Pobegen, G. ; Ostermaier, C. Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determinationArtikel Article 2021
7Grill, A. ; Stampfer, B. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Waltl, M. ; Grasser, T. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTsArtikel Article 2019
8Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C IIRW 2019 Discussion Group II: Reliability for Aerospace ApplicationsKonferenzbeitrag Inproceedings2019
9Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, G. ; Pogany, Dionyz ; Prechtl, G. ; Detzel, T. ; Häberlen, O. The role of defects on reliability aspects in GaN power devicesPräsentation Presentation2019
10Padovan, V ; Koller, Christian ; Pobegen, G ; Ostermaier, C ; Pogany, Dionyz Stress and recovery dynamics of drain current in GaN HD-GIT submitted to DC semi-on stressPräsentation Presentation2019
11Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Hecke, Gebhard ; Neumann, Richard ; Holzbauer, Martin ; Strasser, Gottfried ; Pogany, Dionyz Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaNArtikel Article 2019
12Padovan, Valeria ; Koller, C. ; Pobegen, G. ; Ostermaier, C. ; Pogany, D. Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stressArtikel Article 2019
13Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article 2018
14Koller, Christian ; Pobegen, G. ; Ostermaier, Clemens ; Pogany, Dionyz Trap-related localized breakdown in carbon-doped GaNPräsentation Presentation2018
15Koller, Christian ; Pobegen, G. ; Ostermaier, Clemens ; Pogany, Dionyz The role and mechanisms of carbon in insulating GaN buffersPräsentation Presentation2018
16Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
17Ostermaier, C. ; Lagger, P. ; Reiner, M. ; Pogany, D. Review of bias-temperature instabilities at the III-N/dielectric interfaceArtikel Article 2018
18Reiner, Maria ; Schellander, J. ; Denifl, Günter ; Stadtmueller, M. ; Schmid, Michael ; Frischmuth, Tobias ; Schmid, Ulrich ; Pietschnig, Rudolf ; Ostermaier, Clemens Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlₓGa₁₋ₓN surface donor modification by fluorinationArtikel Article 2017
19Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
20Grill, A. ; Stampfer, B. ; Waltl, M. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Grasser, T. Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTsKonferenzbeitrag Inproceedings 2017

Contributing Publications Mitbeteiligte Publikationen

Results 1-1 of 1 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Lagger Peter Willibald - 2014 - Physics and characterization of the gate stack...pdf.jpgLagger, Peter Willibald Physics and characterization of the gate stack in gallium nitride based MIS-HEMTsThesis Hochschulschrift 2014