Name Card

Full name Familienname, Vorname
Aichinger, Thomas
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-13 of 13 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
2Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor Understanding BTI in SiC MOSFETs and Its Impact on Circuit OperationArtikel Article 2018
3Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
4Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article 2018
5Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueArtikel Article2017
6Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETsKonferenzbeitrag Inproceedings2016
7Pobegen, Gregor ; Aichinger, Thomas ; Salinaro, Alberto ; Grasser, Tibor Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETsArtikel Article2014
8Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard Stand-off Spatially Offset Raman spectroscopyKonferenzbeitrag Inproceedings2014
9Gasser, Christoph ; Aichinger, Thomas ; Ofner, Johannes ; Lendl, Bernhard Stand-off Spatially Offset Raman spectroscopy: towards 3D stand-off imagingKonferenzbeitrag Inproceedings2014
10Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique TemperaturesArtikel Article2013
11Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor ; Nelhiebel, Michael Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETsArtikel Article2011
12Pobegen, Gregor ; Aichinger, Thomas ; Nelhiebel, Michael ; Grasser, Tibor Understanding temperature acceleration for NBTIKonferenzbeitrag Inproceedings2011
13Aichinger Thomas - 2010 - On the role of hydrogen in silicon device degradation...pdf.jpgAichinger, Thomas On the role of hydrogen in silicon device degradation and metalization processingThesis Hochschulschrift 2010