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Full name Familienname, Vorname
Diehle, Patrick
 
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PreviewAuthor(s)TitleTypeIssue Date
1Stabentheiner, M. ; Diehle, P. ; Hübner, S. ; Lejoyeux, M. ; Altmann, F. ; Neumann, R. ; Taylor, A. A. ; Pogany, Dionyz ; Ostermaier, Clemens On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devicesArticle Artikel 14-Jan-2024
2Scales, Ze ; Koller, Christian Martin ; Schoemann, Stephan ; Nelhiebel, Michael ; Reisinger, Michael ; Jatzkowski, Joerg ; Diehle, Patrick ; Stöger-Pollach, Michael Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical CharacterizationPresentation Vortrag13-Nov-2023
3Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, D. ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasArticle Artikel Nov-2023
4Stabentheiner, Manuel ; Diehle, Patrick ; Altmann, F. ; Hübner, S. ; Lejoyeux, M. ; Taylor, A.A. ; Wieland, D. ; Pogany, Dionyz ; Ostermaier, Clemens Test concept for a direct correlation between dislocations and the intrinsic degradation of lateral PIN diodes in GaN-on-Si under reverse biasPresentation Vortrag4-Oct-2023