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Full name Familienname, Vorname
Rigato, Matteo
 
Main Affiliation Organisations­zuordnung
 

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Results 1-18 of 18 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Cecchini, R. ; Selmo, S. ; Wiemer, C. ; Fanciulli, M. ; Rotunno, E. ; Lazzarini, L. ; Rigato, M. ; Pogany, D. ; Lugstein, A. ; Longo, M. In-doped Sb nanowires grown by MOCVD for high speed phase change memoriesArtikel Article 2019
2Cecchini, R. ; Selmo, Simone ; Wiemer, C. ; Fanciulli, M ; Rotunno, E ; Lazzarini, Laura ; Rigato, Matteo ; Pogany, Dionyz ; Lugstein, Alois ; Longo, M In-doped Sb nanowires grown by MOCVD for high speed phase change memoriesPräsentation Presentation2018
3Rigato, Matteo ; Fleury, Clement ; Schwarz, Benedikt ; Mergens, Markus ; Bychikhin, Sergey ; Simburger, Werner ; Pogany, Dionyz Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk TechnologyArtikel Article 2018
4Rigato Matteo - 2018 - ESD experiments and simulations on RF CMOS switches.pdf.jpgRigato, Matteo ESD experiments and simulations on RF CMOS switchesThesis Hochschulschrift 2018
5Wiemer, C. ; Selmo, Simone ; Cecchini, R. ; Cecchi, S. ; Fanciulli, M ; Rotunno, E ; Lazzarini, Laura ; Rigato, Matteo ; Pogany, Dionyz ; Lugstein, Alois ; Longo, M In-based chalcogenide nanowires for ultra-scalded phase change memory applicationsPräsentation Presentation2017
6Cecchini, R. ; Selmo, Simone ; Cecchi, S. ; Wiemer, C. ; Fanciulli, M ; Rotunno, E ; Lazzarini, Laura ; Rigato, Matteo ; Pogany, Dionyz ; Lugstein, Alois ; Longo, M Synthesis and electrical analysis of phase change In3Sb1Te2 nanowire-based devices with low power switchingPräsentation Presentation2017
7Capriotti, M ; Bahat Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Ostermaier, Clemens ; Rigato, Matteo ; Lancaster, Suzanne ; Brunner, Frank ; Detz, Hermann ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistorsArtikel Article Nov-2016
8Simbürger, Werner ; Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Willemen, Joost ; Vendt, V ; Schwingshackl, T ; D´Arbonneau, A ESD Protection Devices and Technologies: Recent Advances and TrendsPräsentation Presentation2016
9Selmo, Simone ; Cecchini, R. ; Cecchi, S. ; Wiemer, C. ; Fanciulli, M. ; Rotunno, E. ; Lazzarini, Laura ; Rigato, Matteo ; Pogany, Dionyz ; Lugstein, Alois ; Longo, M. Low power phase change memory switching of ultra-thin In₃Sb1Te₂ nanowiresArtikel Article 2016
10Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Simbürger, Werner Transient interferometric mapping technique (TIM): an effective tools to understand ESD and device breakdownPräsentation Presentation2015
11Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Vertical breakdown in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2015
12Capriotti, M ; Fleury, Clement ; Bethge, Ole ; Rigato, Matteo ; Lancaster, Suzanne ; Pogany, Dionyz ; Strasser, Gottfried E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate InsulatorKonferenzbeitrag Inproceedings2015
13Rigato, Matteo ; Fleury, Clément ; Heer, Michael ; Capriotti, Mattia ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of mulit-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniqueArtikel Article 2015
14Rigato, Matteo ; Fleury, Clement ; Heer, Michael ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniquePräsentation Presentation2015
15Fleury, Clément ; Capriotti, Mattia ; Rigato, Matteo ; Hilt, Oliver ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, Stephan ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article 2015
16Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
17Fleury, Clement ; Rigato, Matteo ; Simbürger, Werner ; Pogany, Dionyz Transient Interferometric Mapping of SiGe-base RF BJTs in 0,35 μm B7HFV technology under ESD stressPräsentation Presentation2014
18Rigato, Matteo ; Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz ESD characterization of RF-NMOS transistors in 0.13 μm CMOS technology with transient interferometric mappingPräsentation Presentation2014