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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Tselios, Konstantinos ; Knobloch, Theresia ; Michl, Jakob Daniel ; Waldhör, Dominic ; Schleich, Christian ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors | Inproceedings Konferenzbeitrag  | Oct-2022 |
| 2 | | Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael | On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors | Artikel Article | 2021 |
| 3 | | Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor | Toward Automated Defect Extraction From Bias Temperature Instability Measurements | Artikel Article | 2021 |
| 4 | | Michl, J. ; Grill, Alexander ; Stampfer, B. ; Waldhoer, D. ; Schleich, Christian ; Knobloch, T. ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, B. ; Parvais, B. ; Govoreanu, Bogdan ; Radu, I. ; Grasser, T. ; Waltl, M. | Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS | Inproceedings Konferenzbeitrag | 2021 |
| 5 | | Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael | Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental | Artikel Article | 2021 |
| 6 | | Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor | Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory | Artikel Article | 2021 |
| 7 | | Tselios, K. ; Stampfer, B. ; Michl, J. ; Ioannidis, E. ; Enichlmair, H. ; Waltl, M. | Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors | Konferenzbeitrag Inproceedings | 2020 |
| 8 | | Knobloch, Theresia ; Michl, Jakob ; Waldhör, Dominic ; Illarionov, Yury ; Stampfer, Bernhard ; Grill, Alexander ; Zhou, R. ; Wu, P. ; Waltl, Michael ; Appenzeller, J ; Grasser, Tibor | Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures | Konferenzbeitrag Inproceedings | 2020 |
| 9 | | Michl, J. ; Grill, A. ; Claes, D. ; Rzepa, G. ; Kaczer, B. ; Linten, D. ; Radu, I. ; Grasser, T. ; Waltl, M. | Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures | Konferenzbeitrag Inproceedings | 2020 |
| 10 | | Grill, A. ; Bury, E. ; Michl, J. ; Tyaginov, S. ; Linten, D. ; Grasser, T. ; Parvais, B. ; Kaczer, B. ; Waltl, M. ; Radu, I. | Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures | Konferenzbeitrag Inproceedings | 2020 |
